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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HFM501 THRU HFM508
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 5.0 Amperes
FEATURES
* * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.24 gram
DO-214AB
DATA MECHANICAL
* Epoxy : Device has UL flammability classification 94V-0
0.125 (3.17) 0.115 (2.92) 0.280 (7.11) 0.260 (6.60) 0.245 (6.22) 0.220 (5.59)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
o
0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75)
0.012 (0.305) 0.006 (0.152)
0.008 (0.203) 0.004 (0.102)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 50oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ, TSTG 200 70 -65 to + 175 HFM501 HFM502 HFM503 HFM504 HFM505 HFM506 HFM507 HFM508 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 5.0 150 50 600 420 600 800 560 800 1000 700 1000 UNITS Volts Volts Volts Amps Amps pF
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 5.0A DC Maximum Full Load Reverse Current, Full cycle Average TA = 55oC Maximum DC Reverse Current at @TA = 25oC Rated DC Blocking Voltage @TA = 125oC Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. SYMBOL VF IR trr 50 HFM501 HFM502 HFM503 HFM504 HFM505 HFM506 HFM507 HFM508 1.0 1.3 50 10 150 75 1.7 UNITS Volts uAmps uAmps uAmps nSec 2002-5
RATING AND CHARACTERISTIC CURVES ( HFM501 THRU HFM508 )
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE
trr +0.5A
(-) PULSE GENERATOR (NOTE 2)
FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE
6 5 4 3 2 1 0 0 25 50 75 100 125 150175
Single Phase Half Wave 60Hz Resistive or Inductive Load
(+) 25 Vdc (approx) (-)
D.U.T
0 -0.25A
1 NONINDUCTIVE
OSCILLOSCOPE (NOTE 1)
(+)
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms.
1cm
SET TIME BASE FOR 10/20 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA) INSTANTANEOUS FORWARD CURRENT, (A)
1000
100
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
M5
~H
~HF
04
M5
HFM
1.0
TJ = 100
1.0
TJ = 25
.10
0.1
Pulse Width = 300uS 1% Duty Cycle
.01
0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
.01 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200
JUNCTION CAPACITANCE, (pF)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
300
8.3ms Single Half Sine-Wave (JEDEC Method)
100 60 40 20 10 6 4 2 1 .1 .2 .4
TJ = 25
HF
TJ = 25
M5
10
501
HF
HFM
06
TJ = 150
~H
FM
501
50
10
FM 50
100
03
5
8
~HF
M5
05
200
HFM
506
~HF
M50
8
100
HFM501~HFM505
HFM506~HFM508
0 1 10 100 1000 NUMBER OF CYCLES AT 60Hz
1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V )
100
RECTRON
Mounting Pad Layout
0.185 MAX. (4.69 MAX.)
0.121 MIN. (3.07 MIN.)
0.060 MIN. (1.52 MIN.) 0.320 REF
Dimensions in inches and (millimeters)
RECTRON

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